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STI6N90K5 - STMicroelectronics

Description: N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in an I²PAK package

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STI6N90K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK__
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STI6N90K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I2PAK__
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STI6N90K5 Details

  • Manufacturer Part Number:

    STI6N90K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    I2PAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI6N90K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STI6N90K5 is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely up to 100°C junction temperature, with a maximum voltage of 600V and a maximum current of 6A.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink with a thermal resistance of less than 1°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the STI6N90K5 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10Ω and 100Ω is suitable for most applications. However, it's essential to consult the datasheet and application notes for more specific guidance.
  • Yes, the STI6N90K5 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. Additionally, ensure that the device is properly cooled and the layout is optimized for high-frequency operation.
  • To protect the STI6N90K5 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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STI6N90K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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