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STI6N95K5 - STMicroelectronics

Description: N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFET in an I²PAK package

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STI6N95K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STI6N95K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK_2022
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STI6N95K5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - I2PAK_2022
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STI6N95K5 Details

  • Manufacturer Part Number:

    STI6N95K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    I2PAK-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    950 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    1.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.6 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STI6N95K5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STI6N95K5 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the gate-source voltage (VGS) and drain-source voltage (VDS) ratings. Additionally, ensure the device is operated within the recommended current limits and thermal constraints.
  • For optimal thermal management, use a PCB layout that allows for good heat dissipation, such as using thermal vias and a heat sink. Ensure the device is mounted on a suitable heat sink, and follow the recommended thermal resistance (Rth) values in the datasheet.
  • To protect the STI6N95K5 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the design.
  • The recommended gate drive circuits for the STI6N95K5 typically include a gate driver IC, such as the STGAP2SiCS or similar devices, which provide the necessary voltage and current to drive the gate of the MOSFET. The gate drive circuit should be designed to provide a fast rise and fall time, while also ensuring proper voltage and current limiting.

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STI6N95K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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