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STL26N30M8 - STMicroelectronics

Description: N-channel 300 V, 72 mΩ typ., 23 A MDmesh M8 Power MOSFET in a PowerFLAT 5x6 package

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STL26N30M8 - STMicroelectronics PCB footprint - Other - Other - STL26N30M8-1
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STL26N30M8 Details

  • Manufacturer Part Number:

    STL26N30M8

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active Unconfirmed

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    STMicroelectronics

  • Avalanche Energy Rating (Eas):

    580 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.089 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    114 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL26N30M8 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STL26N30M8 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure the STL26N30M8 is properly biased, make sure to follow the recommended biasing conditions specified in the datasheet. This includes setting the gate-source voltage (Vgs) to the recommended value, typically around 10-15V, and ensuring the drain-source voltage (Vds) is within the specified range.
  • For optimal performance and thermal management, it's recommended to follow a PCB layout that minimizes thermal resistance and ensures good heat dissipation. This includes using a thermal pad, thermal vias, and a heat sink if necessary. The datasheet provides guidelines for PCB layout and thermal management.
  • To protect the STL26N30M8 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing, and use ESD protection devices such as TVS diodes or ESD protection arrays if necessary.
  • The recommended gate drive circuits for the STL26N30M8 include using a dedicated gate driver IC, such as the STMicroelectronics L638xA series, or a discrete gate drive circuit using a resistor and capacitor. The datasheet provides guidelines for designing a suitable gate drive circuit.

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STL26N30M8 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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