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STL2N80K5 - STMicroelectronics

Description: N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

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STL2N80K5 - STMicroelectronics PCB footprint - Other - Other - STL2N80K5-1
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STL2N80K5 - STMicroelectronics  - 3D model - Other - STL2N80K5-1
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STL2N80K5 Details

  • Manufacturer Part Number:

    STL2N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    BULK: 3000

  • Avalanche Energy Rating (Eas):

    60.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    4.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.5 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL2N80K5 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STL2N80K5 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 80V. Additionally, the device should be operated within the recommended operating area to avoid overheating.
  • The maximum power dissipation of the STL2N80K5 is 150W, but this can be increased with proper heat sinking and thermal management.
  • To protect the STL2N80K5 from overvoltage and overcurrent, it is recommended to use a voltage regulator and a current limiter in the circuit design. Additionally, a fuse or a circuit breaker can be used to prevent damage from excessive current.
  • The recommended PCB layout for the STL2N80K5 includes using a ground plane, keeping the drain and source pins as close as possible, and using a Kelvin connection for the gate pin. Additionally, the PCB should be designed to minimize parasitic inductance and capacitance.

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STL2N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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