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STL31N65M5 - STMicroelectronics

Description: N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package

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STL31N65M5 - STMicroelectronics - PCB symbol
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STL31N65M5 - STMicroelectronics PCB footprint - Other - Other - PowerFLAT™ 8x8 HV
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STL31N65M5 - STMicroelectronics - 3D model - Other - PowerFLAT™ 8x8 HV
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STL31N65M5 Details

  • Manufacturer Part Number:

    STL31N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    410 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.162 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    S-PSSO-N4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL31N65M5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STL31N65M5 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and ensure the heat sink is properly attached to the device. Additionally, consider using a thermal pad or thermal tape to improve heat transfer.
  • The recommended gate drive voltage for the STL31N65M5 is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • To protect the STL31N65M5 from overvoltage and overcurrent, use a suitable voltage regulator or overvoltage protection (OVP) circuit to limit the voltage to the recommended maximum rating. Additionally, consider using a current sense resistor and a current limiter or overcurrent protection (OCP) circuit to prevent excessive current from flowing through the device.
  • For optimal performance and to minimize electromagnetic interference (EMI), follow these PCB layout guidelines: keep the power traces short and wide, use a solid ground plane, and place the device close to the power source. Additionally, consider using a Kelvin connection for the source pin to reduce parasitic inductance.

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STL31N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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