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STL33N60DM6 - STMicroelectronics

Description: N-channel 600 V, 125 mΩ typ., 21 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

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STL33N60DM6 - STMicroelectronics PCB footprint - Other - Other - STL33N60DM6-1
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STL33N60DM6 Details

  • Manufacturer Part Number:

    STL33N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-04-05

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL33N60DM6 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STL33N60DM6 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper driving of the STL33N60DM6, it's essential to provide a sufficient gate drive voltage (Vgs) and current (Ig). A gate driver IC or a dedicated gate drive circuit can be used to provide the required voltage and current. Additionally, the gate resistance (Rg) and gate capacitance (Cg) should be optimized to minimize switching losses and ensure reliable operation.
  • For optimal thermal management, it's recommended to use a thermal pad or a heat sink with a thermal interface material (TIM) to dissipate heat efficiently. The PCB layout should be designed to minimize thermal resistance and ensure good heat spreading. A 2-layer or 4-layer PCB with a thermal via structure can be used to improve heat dissipation. Additionally, the component placement and routing should be optimized to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • To protect the STL33N60DM6 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor or a current monitor IC can be used to detect overcurrent conditions and trigger a shutdown or fault protection mechanism. A fuse or a circuit breaker can also be used to disconnect the power supply in case of an overcurrent fault.
  • The recommended operating conditions for the STL33N60DM6 are: drain-source voltage (Vds) up to 600V, gate-source voltage (Vgs) up to ±20V, and drain current (Id) up to 33A. The device should be operated within the safe operating area (SOA) to ensure reliable operation and prevent damage.

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STL33N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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