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STL45N60DM6 - STMicroelectronics

Description: N-channel 600 V, 0.094 Ω typ., 25 A, MDmesh™ DM6 Power MOSFET in a PowerFLAT™ 8x8 HV package

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STL45N60DM6 Details

  • Manufacturer Part Number:

    STL45N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-01-28

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    630 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    95 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL45N60DM6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STL45N60DM6 is -40°C to 150°C.
  • To ensure the STL45N60DM6 is properly driven, use a gate driver with a high current capability and a low output impedance. Also, ensure the gate-source voltage is within the recommended range (typically 10-15V) and the gate resistance is minimized.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the power connections. Keep the gate and source connections as close as possible to the device, and use a solid ground plane to reduce inductance.
  • To protect the STL45N60DM6 from overvoltage and overcurrent conditions, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Also, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended cooling method for the STL45N60DM6 is to use a heat sink with a thermal interface material (TIM) to improve heat transfer. Ensure the heat sink is properly mounted and the TIM is applied correctly to achieve optimal thermal performance.

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STL45N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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