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STL60N3LLH5 - STMicroelectronics

Description: N-channel 30 V, 0.0063 Ω, 17 A PowerFLAT™ (5x6) STripFET™ V Power MOSFET

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PCB Footprints
STL60N3LLH5 - STMicroelectronics PCB footprint - Other - Other - PowerFLAT™  5x6_2010
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STL60N3LLH5 - STMicroelectronics  - 3D model - Other - PowerFLAT™  5x6_2010
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STL60N3LLH5 Details

  • Manufacturer Part Number:

    STL60N3LLH5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL60N3LLH5 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range (TJ ≤ 150°C).
  • Monitor the device's drain-source voltage (VDS), drain current (ID), and junction temperature (TJ). Implement overcurrent protection, overvoltage protection, and thermal monitoring to detect potential faults.
  • Use a dedicated gate driver IC or a high-current, low-impedance gate drive circuit. Ensure a fast rise time (tr < 10ns) and a low impedance (Z < 10Ω) to minimize switching losses.
  • Implement ESD protection diodes (e.g., 1.5KE6.8A) between the drain and source pins, and consider adding a TVS (Transient Voltage Suppressor) diode between the drain and gate pins.

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STL60N3LLH5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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