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STL7N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.92 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x5 package

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STL7N60M2 - STMicroelectronics PCB footprint - Other - Other - STL7N60M2-4
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STL7N60M2 - STMicroelectronics  - 3D model - Other - STL7N60M2-4
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STL7N60M2 Details

  • Manufacturer Part Number:

    STL7N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.68 pF

  • JESD-30 Code:

    S-PQFP-F12

  • Number of Elements:

    1

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    FLAT PACK

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    67 W

  • Pulsed Drain Current-Max (IDM):

    4.8 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    QUAD

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL7N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STL7N60M2 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be estimated to be around 10A/600V.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability (>1A) and a fast rise/fall time (<10ns).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections close together, and use a ground plane to reduce inductance. Avoid using vias or narrow traces, and keep the PCB layer stack-up balanced.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions, and then shut down the device or reduce the current using a current limiter.
  • Use a heat sink with a thermal resistance of <1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of >5W/m-K. Ensure good airflow around the heat sink, and consider using a fan or a heat pipe for high-power applications.

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STL7N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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