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STL9N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

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STL9N60M2 Details

  • Manufacturer Part Number:

    STL9N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Additional Feature:

    BULK; 3000

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.86 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.68 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    3 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STL9N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STL9N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by ensuring that the device's power dissipation does not exceed the maximum allowed value, taking into account the thermal resistance and maximum junction temperature.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is minimized (typically <10 ohms). Also, ensure that the gate drive circuit is capable of providing sufficient current to charge and discharge the gate capacitance quickly. A good gate drive design should also include a proper layout to minimize parasitic inductance and capacitance.
  • To minimize EMI, it is recommended to use a multi-layer PCB with a solid ground plane, and to keep the high-frequency switching nodes (e.g. drain and source) as close to the ground plane as possible. Additionally, use a shielded cable or a coaxial cable for the gate drive signal, and keep the PCB traces as short and direct as possible. A good layout should also include a common-mode choke or a ferrite bead to filter out high-frequency noise.
  • To protect the STL9N60M2 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a comparator or an overcurrent protection IC to detect and respond to overcurrent conditions. A good design should also include a fuse or a polyfuse to protect against excessive current.
  • To ensure proper thermal management, use a heat sink with a thermal resistance of <1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of >5 W/m-K. Ensure good thermal contact between the device and the heat sink, and consider using a fan or a heat pipe to enhance heat dissipation. A good thermal design should also take into account the device's maximum junction temperature and the ambient temperature.

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STL9N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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