STO67N60DM6 - STMicroelectronics

STO67N60DM6 Details

• Manufacturer Part Number:

  STO67N60DM6

• Brand Name:

  STMicroelectronics

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Country Of Origin:

  Malaysia

• ECCN Code:

  EAR99

• Date Of Intro:

  2020-05-13

• Manufacturer:

  STMicroelectronics

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  845 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  600 V

• Drain Current-Max (ID):

  58 A

• Drain-source On Resistance-Max:

  0.059 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  2 pF

• JESD-30 Code:

  R-PSSO-F8

• JESD-609 Code:

  e4

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  240 W

• Pulsed Drain Current-Max (IDM):

  190 A

• Surface Mount:

  YES

• Terminal Finish:

  Nickel/Palladium/Gold (Ni/Pd/Au)

• Terminal Form:

  FLAT

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON