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STO68N65DM6 - STMicroelectronics

Description: N-channel 650 V, 53 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-LL package

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STO68N65DM6 - STMicroelectronics - PCB symbol
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STO68N65DM6 - STMicroelectronics PCB footprint - Other - Other - TO-LL type A2_2023
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STO68N65DM6 - STMicroelectronics - 3D model - Other - TO-LL type A2_2023
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STO68N65DM6 Details

  • Manufacturer Part Number:

    STO68N65DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    930 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    55 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    172 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STO68N65DM6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STO68N65DM6 is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely within the boundaries of Vds = 65V, Id = 10A, and Pd = 100W. It's essential to ensure that the device operates within these limits to prevent damage or premature failure.
  • The junction-to-case thermal resistance (Rthjc) for the STO68N65DM6 is not directly provided in the datasheet. However, you can calculate it using the following formula: Rthjc = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. You can find the thermal resistance values for the package in the datasheet, and then use the formula to calculate Rthjc.
  • The recommended gate resistor value for the STO68N65DM6 is not explicitly stated in the datasheet. However, a general guideline is to use a gate resistor value between 10Ω to 100Ω to ensure proper switching and to prevent oscillations. The optimal value depends on the specific application, PCB layout, and switching frequency.
  • Yes, the STO68N65DM6 is suitable for high-frequency switching applications. It has a low gate charge (Qg) and a low output capacitance (Coss), making it suitable for high-frequency switching up to several hundred kHz. However, it's essential to ensure that the device is properly driven, and the PCB layout is optimized to minimize parasitic inductances and capacitances.
  • The body diode of the STO68N65DM6 is an inherent part of the MOSFET structure. It's essential to consider the body diode's characteristics, such as its reverse recovery time and voltage, when designing your application. You may need to add an external diode or take other measures to ensure proper operation and prevent unwanted current flow.

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STO68N65DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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