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STP10NM60N - STMicroelectronics

Description: N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in a TO-220 package

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STP10NM60N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ----TO-220 type A package information-
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STP10NM60N - STMicroelectronics  - 3D model - Transistor Outline, Vertical - ----TO-220 type A package information-
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STP10NM60N Details

  • Manufacturer Part Number:

    STP10NM60N

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.9

  • Additional Feature:

    AVALANCHE ENERGY RATED

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    47 ns

  • Turn-on Time-Max (ton):

    22 ns

STP10NM60N Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STP10NM60N is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper thermal management, the STP10NM60N should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 50°C.
  • The recommended gate resistor value for the STP10NM60N is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the STP10NM60N is suitable for high-reliability applications, but it's essential to follow the recommended operating conditions and derating guidelines to ensure long-term reliability.
  • To protect the STP10NM60N from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) and a fuse or a current limiter in the circuit design.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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