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STP120N4F6 - STMicroelectronics

Description: STMicroelectronics STP120N4F6 N-channel MOSFET Transistor, 80 A, 40 V, 3-Pin TO-220

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PCB Footprints
STP120N4F6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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3D Models
STP120N4F6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STP120N4F6 Details

  • Manufacturer Part Number:

    STP120N4F6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    71 Weeks, 3 Days

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.1

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    394 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    350 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP120N4F6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP120N4F6 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
  • The recommended gate drive voltage for the STP120N4F6 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the STP120N4F6 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB is designed with ESD protection in mind.
  • The maximum allowed current for the STP120N4F6 is 120A, with a maximum pulsed current of 240A.

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STP120N4F6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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