Part Image

STP12N50M2 - STMicroelectronics

Description: N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package

Download STP12N50M2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STP12N50M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
click to zoom
3D Models
STP12N50M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
click to zoom

STP12N50M2 Details

  • Manufacturer Part Number:

    STP12N50M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    10 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Surface Mount:

    NO

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STP12N50M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP12N50M2 is typically defined by the voltage and current ratings, but it's recommended to check the SOA curves provided in the application notes or by contacting STMicroelectronics support.
  • To ensure proper cooling, consider the thermal resistance (Rth) of the package, the maximum junction temperature (Tj), and the power dissipation (Pd) of the device. Use a heat sink or thermal interface material if necessary, and follow the recommended PCB layout and thermal design guidelines.
  • The recommended gate drive voltage for the STP12N50M2 is typically between 10V to 15V, but it's recommended to check the gate threshold voltage (Vgs(th)) and the gate drive requirements in the datasheet or application notes.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a voltage regulator, TVS diode, or a fuse, to prevent damage from voltage spikes, surges, or excessive current.
  • Follow the recommended PCB layout and routing guidelines in the datasheet or application notes, including keeping the power and ground traces separate, using a solid ground plane, and minimizing parasitic inductance and capacitance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STP12N50M2 Overview

Use the download button to access the STP12N50M2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STP12, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STP12N50M2

Showing 0 results