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STP12NK80Z - STMicroelectronics

Description: N-channel 800 V, 585 mΩ typ., 10.5 A SuperMESH Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

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STP12NK80Z - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (STD-ST dual gauge) type A
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STP12NK80Z - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 (STD-ST dual gauge) type A
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STP12NK80Z Details

  • Manufacturer Part Number:

    STP12NK80Z

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    1980-01-04

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.4

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    10.5 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP12NK80Z Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP12NK80Z is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a suitable thermal interface material, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the STP12NK80Z is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the STP12NK80Z from overvoltage and overcurrent, use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit, such as a fuse or a current-sensing resistor.
  • The maximum allowed power dissipation for the STP12NK80Z is 150W, but this can be increased with proper heat sinking and thermal management.

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STP12NK80Z Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Power Field-Effect Transistor, 10.5A I(D), 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET