Part Image

STP185N55F3 - STMicroelectronics

Description: N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package

Download STP185N55F3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STP185N55F3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 mechanical data
click to zoom
3D Models
STP185N55F3 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 mechanical data
click to zoom

STP185N55F3 Details

  • Manufacturer Part Number:

    STP185N55F3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP185N55F3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STP185N55F3 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STP185N55F3, this region is typically bounded by the maximum voltage, current, and power dissipation ratings.
  • To ensure the STP185N55F3 is properly biased for optimal performance, follow the recommended biasing conditions outlined in the datasheet. This typically includes setting the gate-source voltage (Vgs) within the recommended range, ensuring the drain-source voltage (Vds) is within the maximum rating, and providing a suitable gate drive circuit to minimize switching losses.
  • The recommended PCB layout and thermal management for the STP185N55F3 involve following best practices for high-power MOSFETs. This includes using a multi-layer PCB with a solid ground plane, placing the device close to the heat sink, and ensuring good thermal conductivity between the device and the heat sink. Additionally, consider using thermal vias, thermal pads, and a heat sink with a high thermal conductivity to minimize thermal resistance.
  • To protect the STP185N55F3 from electrostatic discharge (ESD), follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, and ensuring that the device is stored in a static-protected environment. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to the PCB design to protect the device from ESD events.
  • The reliability and lifetime expectations of the STP185N55F3 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. According to the datasheet, the device is designed to meet certain reliability standards, such as AEC-Q101. However, the actual lifetime of the device can vary depending on the specific application and operating conditions. It is recommended to consult with STMicroelectronics or a qualified reliability engineer to determine the expected lifetime of the device in a specific application.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STP185N55F3 Overview

Use the download button to access the STP185N55F3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STP18, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STP185N55F3

Showing 0 results