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STP18N60DM2 - STMicroelectronics

Description: N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package

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STP18N60DM2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP18N60DM2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP18N60DM2 Details

  • Manufacturer Part Number:

    STP18N60DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220,3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    380 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.295 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.33 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP18N60DM2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP18N60DM2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA), maximum junction temperature (Tj), and power dissipation (PD). Use a heat sink or thermal interface material to reduce thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to optimize your design.
  • The recommended gate drive voltage for the STP18N60DM2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
  • To protect the STP18N60DM2 from overvoltage and overcurrent, use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sense resistors. You can also implement overcurrent protection (OCP) and short-circuit protection (SCP) using external components or ICs.
  • For optimal performance and reliability, follow good PCB layout and routing practices, such as keeping the gate drive signal traces short and away from noise sources, using a solid ground plane, and minimizing inductance in the power loop. You can also use PCB design tools and simulation software to optimize your layout.

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STP18N60DM2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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