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STP18NM60N - STMicroelectronics

Description: N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

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STP18NM60N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
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STP18NM60N - STMicroelectronics  - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
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STP18NM60N Details

  • Manufacturer Part Number:

    STP18NM60N

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    350 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.285 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP18NM60N Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STP18NM60N is 100 kHz, but it can be used up to 200 kHz with some limitations.
  • The power dissipation of the STP18NM60N can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The thermal resistance of the STP18NM60N is 1.5°C/W (junction-to-ambient) and 0.5°C/W (junction-to-case).
  • Yes, the STP18NM60N is suitable for high-reliability applications, such as automotive and industrial systems, due to its robust design and high-quality manufacturing process.
  • To protect the STP18NM60N from overvoltage and overcurrent, you can use a voltage regulator, a current limiter, and a fuse in series with the device. Additionally, you can use a gate driver with built-in overcurrent protection.

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STP18NM60N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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