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STP23N80K5 - STMicroelectronics

Description: N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-220 package

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STP23N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP23N80K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP23N80K5 Details

  • Manufacturer Part Number:

    STP23N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP23N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP23N80K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STP23N80K5, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 800V, and the maximum drain current (Id) of 23A.
  • To ensure proper cooling of the STP23N80K5, it is essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device's exposed pad, and then attaching a heat sink with a sufficient thermal conductivity. The heat sink should be designed to dissipate the maximum expected power losses of the device, taking into account the device's thermal resistance (Rth) and the maximum ambient temperature.
  • The recommended gate drive voltage for the STP23N80K5 is typically between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance. It is essential to ensure that the gate drive voltage is sufficient to fully enhance the device, but not so high that it exceeds the maximum Vgs rating.
  • To protect the STP23N80K5 from electrostatic discharge (ESD), it is essential to handle the device with care and follow proper ESD precautions during assembly and testing. This includes using ESD-safe materials, grounding personnel and equipment, and avoiding direct contact with the device's pins. Additionally, the device should be stored in an ESD-safe package, and any exposed pins should be protected with ESD protection devices or diodes.
  • The maximum allowed dv/dt for the STP23N80K5 is not explicitly stated in the datasheet, but it is typically limited by the device's internal capacitances and the risk of voltage overshoots. A general guideline is to limit the dv/dt to less than 10V/ns to ensure reliable operation and prevent voltage overshoots. However, the actual dv/dt limit may vary depending on the specific application and the device's operating conditions.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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