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STP26NM60ND - STMicroelectronics

Description: STMicroelectronics STP26NM60ND N-channel MOSFET Transistor, 21 A, 600 V, 3-Pin TO-220

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STP26NM60ND - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A_2020
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STP26NM60ND - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A_2020
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STP26NM60ND Details

  • Manufacturer Part Number:

    STP26NM60ND

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP26NM60ND Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STP26NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 60V. Additionally, the gate current (Ig) should be limited to 100 mA.
  • The thermal resistance (Rth) of the STP26NM60ND is 40°C/W (junction-to-ambient) and 2.5°C/W (junction-to-case).
  • Yes, the STP26NM60ND is rated for operation up to 150°C, making it suitable for high-temperature applications.
  • To protect the STP26NM60ND from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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