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STP35N65DM2 - STMicroelectronics

Description: N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-220 package

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STP35N65DM2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP35N65DM2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP35N65DM2 Details

  • Manufacturer Part Number:

    STP35N65DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP35N65DM2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP35N65DM2 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 10-15V. Additionally, use a suitable gate resistor (Rg) to limit the gate current and prevent oscillations.
  • For optimal thermal management, use a multi-layer PCB with a solid ground plane and a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
  • Use a suitable overvoltage protection (OVP) circuit to prevent voltage spikes and transients from damaging the device. Implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC. Ensure the protection circuits are designed to respond quickly to fault conditions.
  • The STP35N65DM2 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. For latch-up prevention, ensure the device is operated within the recommended voltage and current ranges, and avoid applying high voltage or current pulses to the device.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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