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STP35N65M5 - STMicroelectronics

Description: STP35N65M5 N-Channel MOSFET, 27 A, 650 V MDmesh M5, 3-Pin TO-220 STMicroelectronics

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STP35N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (dual gauge)
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STP35N65M5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 (dual gauge)
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STP35N65M5 Details

  • Manufacturer Part Number:

    STP35N65M5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    27 A

  • Drain-source On Resistance-Max:

    0.098 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    108 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP35N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP35N65M5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal pad with a low thermal resistance to dissipate heat. Also, ensure good airflow around the device and avoid blocking the heat sink or thermal pad. You can also use thermal simulation tools to optimize your design.
  • The recommended gate drive voltage for the STP35N65M5 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure the gate drive voltage is within the specified range to avoid damaging the device or affecting its performance.
  • Yes, the STP35N65M5 is suitable for high-frequency switching applications up to several hundred kHz. However, it's crucial to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean and fast switching signal.
  • To protect the STP35N65M5 from overvoltage and overcurrent conditions, consider using voltage clamping devices, such as TVS diodes or zener diodes, and current sensing resistors or fuses. You can also implement overvoltage and overcurrent protection circuits using dedicated ICs or microcontrollers.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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