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STP410N4F7AG - STMicroelectronics

Description: Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 180 A STripFET F7 in a TO-220 package

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STP410N4F7AG - STMicroelectronics - PCB symbol
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PCB Footprints
STP410N4F7AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_22
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3D Models
STP410N4F7AG - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220_22
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STP410N4F7AG Details

  • Manufacturer Part Number:

    STP410N4F7AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1900 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0018 Ω

  • FET Technology:

    SPLIT GATE TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    390 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    365 W

  • Pulsed Drain Current-Max (IDM):

    720 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP410N4F7AG Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal pad connection, copper pour, and via placement to ensure optimal thermal performance.
  • You can calculate the junction temperature (Tj) using the formula: Tj = Ta + (Rθja * Pd), where Ta is the ambient temperature, Rθja is the junction-to-ambient thermal resistance, and Pd is the power dissipation. The Rθja value can be found in the datasheet.
  • The maximum allowed voltage on the gate-source (Vgs) pin is ±20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • To ensure the device is properly turned off during shutdown, make sure to pull the gate-source (Vgs) pin low (typically to GND) and the drain-source (Vds) pin high (typically to Vcc) to prevent any leakage current.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 1Ω to 10Ω to ensure optimal switching performance and minimize ringing.

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STP410N4F7AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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