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STP50N65DM6 - STMicroelectronics

Description: N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO‑220 package

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STP50N65DM6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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STP50N65DM6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP50N65DM6 Details

  • Manufacturer Part Number:

    STP50N65DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-01-08

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP50N65DM6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP50N65DM6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STP50N65DM6, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 650V, and the maximum drain current (Id) of 50A.
  • To ensure proper cooling of the STP50N65DM6, it is essential to provide a suitable heat sink and thermal interface material (TIM) to dissipate heat efficiently. The datasheet provides a thermal resistance (Rth) value of 0.35°C/W, which can be used to estimate the required heat sink size and thermal interface material. Additionally, the PCB layout and design should be optimized to minimize thermal resistance and ensure good airflow around the device.
  • The recommended gate drive voltage for the STP50N65DM6 is not explicitly stated in the datasheet, but it is typically in the range of 10-15V. A higher gate drive voltage can help to reduce the turn-on resistance (Rds(on)) and improve the device's switching performance. However, it is essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage (Vgs) rating of ±20V.
  • To protect the STP50N65DM6 from electrostatic discharge (ESD), it is essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and packaging materials, as well as ensuring that the device is properly grounded during handling and assembly. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD events from damaging the device.
  • The maximum allowed dv/dt for the STP50N65DM6 is not explicitly stated in the datasheet, but it is typically in the range of 10-50V/ns. Exceeding this value can cause the device to malfunction or fail. To ensure reliable operation, it is essential to limit the dv/dt to a safe value, which can be achieved using snubber circuits or other dv/dt limiting techniques.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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