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STP52P3LLH6 - STMicroelectronics

Description: MOSFET N-CHANNEL 30V 52A TO220

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STP52P3LLH6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A_
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STP52P3LLH6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A_
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STP52P3LLH6 Details

  • Manufacturer Part Number:

    STP52P3LLH6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    SPLIT GATE TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    287 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    208 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP52P3LLH6 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout for the STP52P3LLH6 in the application note AN5176, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using thermal management techniques such as heat sinks, thermal interfaces, and airflow to keep the device within its specified temperature range.
  • The STP52P3LLH6's power dissipation (PD) affects the system design in terms of thermal management, power supply, and PCB layout. Ensure that the system can handle the device's maximum power dissipation, and consider using power management techniques such as power gating, dynamic voltage and frequency scaling, and thermal monitoring to minimize power consumption and heat generation.
  • To optimize the STP52P3LLH6's performance for your specific application, consider factors such as clock frequency, voltage supply, and signal integrity. Use simulation tools and models provided by STMicroelectronics to analyze and optimize the device's performance, and consult the device's datasheet and application notes for guidance on optimal operating conditions.
  • The STP52P3LLH6 has built-in ESD protection and latch-up prevention measures, including ESD diodes and protection circuits. However, it's still essential to follow proper handling and assembly procedures to prevent ESD damage, and to design the system with ESD protection in mind, such as using ESD protection devices and following ESD-safe design practices.

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STP52P3LLH6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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