Part Image

STP57N65M5 - STMicroelectronics

Description: N-channel 650 V, 56 mΩ typ., 42 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP and TO-220 packages

Download STP57N65M5 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STP57N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 TYPE A-ren1
click to zoom
3D Models
STP57N65M5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 TYPE A-ren1
click to zoom

STP57N65M5 Details

  • Manufacturer Part Number:

    STP57N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.063 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    168 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP57N65M5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP57N65M5 is -40°C to 150°C.
  • To ensure optimal performance, the STP57N65M5 should be biased with a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) not exceeding 650V.
  • The recommended gate resistor value for the STP57N65M5 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the STP57N65M5 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the STP57N65M5 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding a current sense resistor and a fuse or a current limiter in the circuit.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STP57N65M5 Overview

Use the download button to access the STP57N65M5 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STP57, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STP57N65M5

Showing 0 results