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STP6N120K3 - STMicroelectronics

Description: STMicroelectronics STP6N120K3 N-channel MOSFET Transistor, 6 A, 1200 V, 3-Pin TO-220

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STP6N120K3 - STMicroelectronics - PCB symbol
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PCB Footprints
STP6N120K3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220_a
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STP6N120K3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - 3-Pin TO-220_a
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STP6N120K3 Details

  • Manufacturer Part Number:

    STP6N120K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP6N120K3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STP6N120K3 is typically defined by the voltage and current ratings, which are 1200V and 6A respectively. However, it's essential to consider the device's thermal characteristics, such as junction temperature and thermal resistance, to ensure reliable operation within the SOA.
  • To ensure proper cooling, consider the device's thermal resistance (Rth(j-a) = 1.5°C/W) and maximum junction temperature (Tj = 150°C). Use a suitable heat sink, and ensure good thermal contact between the device and heat sink. Also, consider airflow, ambient temperature, and other thermal design considerations.
  • The recommended gate resistor value for the STP6N120K3 depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's essential to consider the device's gate charge, switching frequency, and other circuit parameters to determine the optimal value.
  • To protect the STP6N120K3 from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes. Additionally, use a current sense resistor and a fuse or circuit breaker to detect and respond to overcurrent conditions.
  • The recommended dead time for the STP6N120K3 in a half-bridge configuration depends on the specific application and switching frequency. A typical value is around 100-200 ns, but it's essential to consider the device's switching characteristics, circuit layout, and other parameters to determine the optimal dead time.

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STP6N120K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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