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STP6N90K5 - STMicroelectronics

Description: N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a TO-220 package

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STP6N90K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
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STP6N90K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
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STP6N90K5 Details

  • Manufacturer Part Number:

    STP6N90K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP6N90K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP6N90K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and maximum current rating. A safe operating area curve can be generated using the device's thermal model and the application's specific operating conditions.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is minimized (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to provide a fast rise and fall time (<10ns) and a high current capability (>1A).
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink (if used). Use a thermal interface material (TIM) with a thermal conductivity >1 W/m-K. Keep the PCB layout compact and symmetrical to minimize thermal gradients.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Consider using a fuse or a polyfuse to provide additional protection.
  • The STP6N90K5 has a typical lifetime of 10-20 years, depending on the application and operating conditions. The device is designed to meet the reliability requirements of automotive and industrial applications. However, the actual lifetime may vary depending on factors such as temperature, voltage, and current stress.

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STP6N90K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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