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STP80N600K6 - STMicroelectronics

Description: N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET in a TO-220 package

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STP80N600K6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 type A
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3D Models
STP80N600K6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220 type A
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STP80N600K6 Details

  • Manufacturer Part Number:

    STP80N600K6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • JESD-609 Code:

    e3

  • Terminal Finish:

    Matte Tin (Sn) - annealed

STP80N600K6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STP80N600K6 is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and power dissipation. Typically, it's recommended to operate the device within 80% of the maximum ratings to ensure reliability.
  • To ensure proper cooling, the STP80N600K6 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum power dissipation of the device, and the thermal interface material should be applied between the device and heat sink to minimize thermal resistance.
  • The recommended gate drive voltage for the STP80N600K6 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact STMicroelectronics support for more information.
  • Yes, the STP80N600K6 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
  • The recommended PCB layout for the STP80N600K6 should minimize the parasitic inductance and capacitance. This can be achieved by using a compact layout, keeping the gate and source pins close together, and using a solid ground plane. It's also recommended to use a Kelvin connection for the source pin to reduce the parasitic inductance.

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STP80N600K6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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