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STP85NF55 - STMicroelectronics

Description: Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET(TM) II Power MOSFET in TO-220 package

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STP85NF55 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STP85NF55 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STP85NF55 Details

  • Manufacturer Part Number:

    STP85NF55

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    980 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STP85NF55 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STP85NF55 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-20 V).
  • The recommended gate drive voltage for the STP85NF55 is between 10-15 V, with a maximum gate-source voltage of ±20 V.
  • Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent.
  • The maximum allowed power dissipation for the STP85NF55 is 150 W, but this can be increased with proper heat sinking and thermal management.

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STP85NF55 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STP85NF55L STMicroelectronics

Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB