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STPSC8H065CT - STMicroelectronics

Description: 650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode

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STPSC8H065CT - STMicroelectronics - PCB symbol
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PCB Footprints
STPSC8H065CT - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2022
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3D Models
STPSC8H065CT - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220AB_2022
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STPSC8H065CT Details

  • Manufacturer Part Number:

    STPSC8H065CT

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Application:

    POWER

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Non-rep Pk Forward Current-Max:

    35 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STPSC8H065CT Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper pour, and via placement to ensure optimal thermal performance.
  • You can calculate the junction temperature (Tj) using the formula: Tj = Tc + (Rthjc * Pd), where Tc is the case temperature, Rthjc is the junction-to-case thermal resistance, and Pd is the power dissipation. Refer to the datasheet for the Rthjc value and calculate Pd based on your application.
  • The maximum allowed voltage on the gate-source (Vgs) pin is ±20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the STPSC8H065CT is suitable for high-frequency switching applications up to 100 kHz. However, you should ensure that the device is properly cooled, and the PCB layout is optimized for high-frequency operation.
  • To protect the STPSC8H065CT from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in your design, such as TVS diodes or ESD protection arrays.

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STPSC8H065CT Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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