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STPSC8H065DI - STMicroelectronics

Description: 650 V, 8 A high surge silicon carbide power Schottky diode

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STPSC8H065DI - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T0-220AC ins
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STPSC8H065DI - STMicroelectronics  - 3D model - Transistor Outline, Vertical - T0-220AC ins
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STPSC8H065DI Details

  • Manufacturer Part Number:

    STPSC8H065DI

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.42

  • Application:

    POWER

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    80 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

STPSC8H065DI Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the package is recommended for optimal thermal performance. The thermal vias should be connected to the ground plane to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it is essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature range (TJ) of -40°C to 150°C.
  • To prevent ESD damage, handle the device in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and use ESD-protected packaging and storage materials. Avoid touching the device pins or handling the device in a way that could generate static electricity.
  • To determine the suitable heat sink for the STPSC8H065DI, calculate the thermal resistance (Rth) required to maintain the junction temperature (TJ) within the specified range. Consider factors such as the device's power dissipation, ambient temperature, and airflow. A heat sink with a thermal resistance lower than the calculated Rth is recommended.
  • When paralleling multiple STPSC8H065DI devices, ensure that each device has its own separate gate drive circuitry and that the devices are matched for optimal current sharing. The devices should be connected in parallel with a common source connection, and the gate signals should be synchronized to prevent shoot-through currents.

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STPSC8H065DI Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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