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STQ3N45K3-AP - STMicroelectronics

Description: STMicroelectronics STQ3N45K3-AP N-channel MOSFET Transistor, 0.6 A, 450 V, 3-Pin TO-92

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STQ3N45K3-AP - STMicroelectronics PCB footprint - Other - Other - TO-92_1
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STQ3N45K3-AP - STMicroelectronics  - 3D model - Other - TO-92_1
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STQ3N45K3-AP Details

  • Manufacturer Part Number:

    STQ3N45K3-AP

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    450 V

  • Drain Current-Max (ID):

    0.6 A

  • Drain-source On Resistance-Max:

    3.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    2.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STQ3N45K3-AP Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be within the recommended range of 2V to 4V. The drain-source voltage (Vds) should be within the recommended range of 10V to 30V. Additionally, the device should be operated within the recommended temperature range of -40°C to 150°C.
  • To prevent ESD, handle the device by the body or use an anti-static wrist strap. Avoid touching the device's pins or exposed die. Use an anti-static bag or wrap the device in anti-static material during storage and transportation. Ground the device to a common ground point during assembly and testing.
  • The suitable gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms to 100 ohms. However, it's recommended to consult the application note or contact STMicroelectronics' technical support for specific guidance.
  • STMicroelectronics follows the IEC 60747-1 and IEC 60747-9 standards for the reliability and quality of the STQ3N45K3-AP. The device is also qualified according to the AEC-Q101 automotive standard and is PPAP (Production Part Approval Process) capable.

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STQ3N45K3-AP Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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