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STRH40P10HYG - STMicroelectronics

Description: Rad-Hard 100 V, 34 A P-channel Power MOSFET

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STRH40P10HYG - STMicroelectronics - PCB symbol
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PCB Footprints
STRH40P10HYG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA
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3D Models
STRH40P10HYG - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-254AA
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STRH40P10HYG Details

  • Manufacturer Part Number:

    STRH40P10HYG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    France

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    1133 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    306 pF

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    176 W

  • Pulsed Drain Current-Max (IDM):

    136 A

  • Reference Standard:

    EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    205 ns

  • Turn-on Time-Max (ton):

    76 ns

STRH40P10HYG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
  • Implement a proper heat sink design, ensure good airflow, and consider using a thermal interface material (TIM) to reduce thermal resistance. Monitor junction temperature (TJ) and adjust the design accordingly.
  • Use a shielded enclosure, keep sensitive components away from the STRH40P10HYG, and ensure proper grounding and decoupling. Implement EMI filters and shielding on the PCB if necessary.
  • Use a dedicated gate driver IC, ensure a low-impedance gate drive circuit, and optimize the gate resistance (RG) for the specific application. Consider using a gate drive transformer for high-frequency applications.
  • Monitor the device's junction temperature (TJ), drain-source voltage (VDS), and drain current (ID). Implement overcurrent protection, overvoltage protection, and thermal shutdown mechanisms.

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STRH40P10HYG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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