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STU4N80K5 - STMicroelectronics

Description: STU4N80K5 N-Channel MOSFET, 3 A, 800 V MDmesh K5, SuperMESH5, 3-Pin IPAK STMicroelectronics

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STU4N80K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STU4N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK (TO-251)
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3D Models
STU4N80K5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - IPAK (TO-251)
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STU4N80K5 Details

  • Manufacturer Part Number:

    STU4N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    74.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STU4N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STU4N80K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure the STU4N80K5 is properly biased, follow the recommended biasing scheme outlined in the datasheet. This typically involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range. Additionally, consider using a gate driver IC to provide a stable and controlled gate voltage.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using a thick copper layer and thermal vias. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation. The datasheet provides guidelines for PCB layout and thermal management, but it's also recommended to consult with experienced engineers or thermal management experts.
  • To protect the STU4N80K5 from overvoltage and overcurrent conditions, consider using voltage regulators, current limiters, and overvoltage protection (OVP) circuits. Additionally, ensure that the device is operated within its specified voltage and current ratings, and consider using a fuse or circuit breaker to prevent damage from excessive current.
  • To protect the STU4N80K5 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags and wrist straps. Additionally, consider using ESD protection devices, such as TVS diodes or ESD protection ICs, in the circuit design.

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STU4N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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