Please enter a minimum 3 letters or numbers
Technical Content
Part Image

STU5N95K3 - STMicroelectronics

Description: N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in an IPAK package

Download STU5N95K3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
STU5N95K3 - STMicroelectronics - PCB symbol
click to zoom
PCB Footprints
STU5N95K3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK (TO-251) type E package outline
click to zoom
3D Models
STU5N95K3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - IPAK (TO-251) type E package outline
click to zoom

STU5N95K3 Details

  • Manufacturer Part Number:

    STU5N95K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-251

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    950 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STU5N95K3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STU5N95K3 is not explicitly stated in the datasheet. However, according to STMicroelectronics' application notes, the device can operate safely within the boundaries of Vds = 50V, Id = 5A, and Pd = 40W. It's essential to ensure that the device operates within these limits to prevent damage or premature failure.
  • To calculate the junction temperature (Tj) of the STU5N95K3, you can use the following formula: Tj = Tc + (Rthjc * Pd), where Tc is the case temperature, Rthjc is the thermal resistance from junction to case (specified in the datasheet as 1.5°C/W), and Pd is the power dissipation. Make sure to monitor the device's temperature to prevent overheating.
  • For optimal thermal management, it's recommended to use a PCB layout with a large copper area for heat dissipation. Ensure that the device is mounted on a heat sink or a metal pad with a thermal interface material (TIM) to reduce thermal resistance. Additionally, keep the PCB traces and components away from the device to minimize thermal coupling.
  • While the STU5N95K3 is a high-voltage N-channel MOSFET, it's not optimized for high-frequency switching applications. The device's gate charge and output capacitance may limit its performance in high-frequency switching circuits. If you need to operate at high frequencies, consider using a MOSFET specifically designed for high-frequency switching, such as the STP5NK50ZFP.
  • To ensure proper driving and biasing of the STU5N95K3, make sure to provide a suitable gate-source voltage (Vgs) and a stable gate drive signal. The recommended Vgs is between 10V and 15V, and the gate drive signal should have a rise and fall time of less than 10ns. Additionally, ensure that the device is properly biased in the linear region to prevent overheating and premature failure.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STU5N95K3 Overview

Use the download button to access the STU5N95K3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STU5N, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STU5N95K3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑