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STW20N60M2-EP - STMicroelectronics

Description: PTD HIGH VOLTAGE - Bulk

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PCB Footprints
STW20N60M2-EP - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T O-247
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3D Models
STW20N60M2-EP - STMicroelectronics  - 3D model - Transistor Outline, Vertical - T O-247
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STW20N60M2-EP Details

  • Manufacturer Part Number:

    STW20N60M2-EP

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STW20N60M2-EP Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for STW20N60M2-EP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may lead to excessive power dissipation or thermal stress.
  • To ensure the STW20N60M2-EP MOSFET is fully turned on, apply a gate-source voltage (Vgs) that is greater than the specified threshold voltage (Vth) and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly. A general rule of thumb is to apply a Vgs of at least 10V to ensure the MOSFET is fully enhanced.
  • The recommended PCB layout and thermal management for STW20N60M2-EP involve using a thermally efficient layout, such as a star-point configuration, to minimize thermal resistance. Ensure good thermal conduction by using a heat sink or thermal pad, and consider using thermal vias to dissipate heat. Follow STMicroelectronics' application notes and PCB layout guidelines for more specific recommendations.
  • Yes, the STW20N60M2-EP is suitable for high-frequency switching applications due to its low gate charge, low output capacitance, and fast switching times. However, ensure that the gate drive circuit is designed to handle the high-frequency switching requirements, and consider the effects of parasitic inductance and capacitance on the circuit's performance.
  • To protect the STW20N60M2-EP from overvoltage and overcurrent conditions, use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Implement overcurrent protection using a current sense amplifier and a shutdown circuit. Ensure that the protection circuitry is designed to respond quickly to fault conditions and can handle the maximum expected fault currents and voltages.

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STW20N60M2-EP Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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