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STW20N65M5 - STMicroelectronics

Description: STMicroelectronics STW20N65M5 N-channel MOSFET Transistor, 18 A, 710 V, 3-Pin TO-247

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STW20N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STW20N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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3D Models
STW20N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW20N65M5 Details

  • Manufacturer Part Number:

    STW20N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW20N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STW20N65M5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STW20N65M5, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 650V, and the maximum drain current (Id) of 20A.
  • To ensure proper cooling of the STW20N65M5, it is essential to provide a suitable heat sink and thermal interface material (TIM) to dissipate heat efficiently. The datasheet recommends a maximum junction-to-case thermal resistance (Rthjc) of 1.5°C/W. A heat sink with a thermal resistance of less than 1.5°C/W should be used, and the TIM should have a thermal conductivity of at least 5 W/mK. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The recommended gate drive voltage for the STW20N65M5 is not explicitly stated in the datasheet, but it is typically in the range of 10V to 15V. A higher gate drive voltage can help to reduce the turn-on and turn-off times, but it may also increase the gate current and power losses. A lower gate drive voltage can help to reduce power losses, but it may increase the turn-on and turn-off times. The optimal gate drive voltage depends on the specific application and switching frequency.
  • To protect the STW20N65M5 from overvoltage and overcurrent, it is essential to use a suitable protection circuit. This can include a voltage clamp or a zener diode to limit the voltage across the device, as well as a current sense resistor and a comparator to detect overcurrent conditions. Additionally, a fuse or a circuit breaker can be used to disconnect the power supply in case of an overcurrent fault. The protection circuit should be designed to respond quickly to fault conditions and to minimize the energy absorbed by the device during a fault.
  • The recommended PCB layout and routing for the STW20N65M5 involves minimizing the parasitic inductance and capacitance in the power circuit. This can be achieved by using a compact layout, minimizing the length of the power traces, and using a solid ground plane. The gate drive circuit should be routed close to the device to minimize the gate resistance and inductance. Additionally, the PCB should be designed to minimize the thermal resistance and to provide good heat dissipation.

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STW20N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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