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STW20N95DK5 - STMicroelectronics

Description: N-channel 950 V, 275 mΩ typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages

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STW20N95DK5 - STMicroelectronics - PCB symbol
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PCB Footprints
STW20N95DK5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2022
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3D Models
STW20N95DK5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247_2022
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STW20N95DK5 Details

  • Manufacturer Part Number:

    STW20N95DK5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-05-11

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    520 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    950 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.33 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW20N95DK5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STW20N95DK5 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • To calculate the power dissipation of the STW20N95DK5, you need to consider the drain-source on-resistance (Rds(on)), the drain current (ID), and the voltage drop across the device. The power dissipation can be calculated using the formula: Pd = ID^2 * Rds(on) + ID * Vds. You can find the Rds(on) and Vds values in the datasheet.
  • The recommended gate drive voltage for the STW20N95DK5 is between 10V and 15V. A higher gate drive voltage can improve the switching performance, but it may also increase the power consumption and EMI emissions.
  • Yes, the STW20N95DK5 is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled, and the PCB layout is optimized to minimize parasitic inductances and capacitances.
  • To protect the STW20N95DK5 from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. You can also implement overvoltage protection (OVP) and overcurrent protection (OCP) using external components or ICs.

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STW20N95DK5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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