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STW25N60M2-EP - STMicroelectronics

Description: N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-247 package

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PCB Footprints
STW25N60M2-EP - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247[H=5.15mm]
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3D Models
STW25N60M2-EP - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247[H=5.15mm]
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STW25N60M2-EP Details

  • Manufacturer Part Number:

    STW25N60M2-EP

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STW25N60M2-EP Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STW25N60M2-EP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings, as well as its thermal impedance and switching characteristics.
  • To ensure reliable operation in high-temperature environments, it's essential to consider the device's thermal characteristics, such as its maximum junction temperature (Tj) and thermal impedance (Rthja). Ensure that the device is properly heatsinked, and the ambient temperature is within the recommended operating range. Additionally, consider derating the device's power handling capabilities at higher temperatures to prevent thermal runaway.
  • The recommended gate drive voltage for the STW25N60M2-EP is typically between 10V to 15V, with a current capability of around 1A to 2A. However, the optimal gate drive voltage and current may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more detailed information on gate drive requirements.
  • To minimize EMI in your design, consider using a low-inductance layout, decoupling capacitors, and a common-mode choke. Additionally, ensure that the device is properly grounded, and the PCB layout is optimized to reduce radiated emissions. It's also recommended to follow good design practices, such as using a shielded cable for the gate drive signal and minimizing the length of the gate drive trace.
  • The reliability and lifetime expectations for the STW25N60M2-EP are dependent on various factors, including the operating conditions, ambient temperature, and quality of the device. According to the datasheet, the device is rated for a minimum of 10 years of operation at a junction temperature of 150°C. However, the actual lifetime may be longer or shorter depending on the specific application and operating conditions.

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STW25N60M2-EP Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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