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STW27N60M2-EP - STMicroelectronics

Description: N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages

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STW27N60M2-EP - STMicroelectronics - PCB symbol
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PCB Footprints
STW27N60M2-EP - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW27N60M2-EP - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW27N60M2-EP Details

  • Manufacturer Part Number:

    STW27N60M2-EP

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    260 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.163 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW27N60M2-EP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STW27N60M2-EP is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
  • To ensure proper cooling, consider the device's thermal resistance (Rth(j-a) = 1.5°C/W) and maximum junction temperature (Tj = 150°C). Use a suitable heat sink, thermal interface material, and ensure good airflow around the device. You can also use thermal simulation tools to optimize your design.
  • The recommended gate drive voltage for the STW27N60M2-EP is between 10V and 15V. However, the optimal gate drive voltage may vary depending on your specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the STW27N60M2-EP is a radiation-hardened (RAD-HARD) device, making it suitable for high-reliability and aerospace applications. However, you should consult the datasheet and relevant standards (e.g., ESCC, NASA, or MIL-STD) to ensure compliance with specific requirements.
  • The STW27N60M2-EP has an integrated ESD protection diode, but it's still essential to follow proper ESD handling procedures when working with the device. Use an ESD wrist strap, mat, or workstation, and ensure that your equipment and tools are properly grounded.

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STW27N60M2-EP Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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