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STW35N65DM2 - STMicroelectronics

Description: N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package

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STW35N65DM2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW35N65DM2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW35N65DM2 Details

  • Manufacturer Part Number:

    STW35N65DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW35N65DM2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STW35N65DM2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently, and the device should be placed in a location that allows for good airflow.
  • The recommended gate drive voltage for the STW35N65DM2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses, but it may also increase the risk of gate oxide breakdown.
  • To protect the STW35N65DM2 from electrostatic discharge (ESD), it's essential to handle the device with care and follow proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, the device should be connected to a ground plane or a protective circuit to prevent ESD damage.
  • The maximum allowed dv/dt for the STW35N65DM2 is not explicitly stated in the datasheet, but it's typically in the range of 1-10 kV/μs. Exceeding this limit can cause the device to malfunction or fail. It's essential to ensure that the device is operated within the recommended dv/dt limits to prevent premature failure.

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STW35N65DM2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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