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STW37N60DM2AG - STMicroelectronics

Description: Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package

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STW37N60DM2AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW37N60DM2AG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW37N60DM2AG Details

  • Manufacturer Part Number:

    STW37N60DM2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    650 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.8 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW37N60DM2AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STW37N60DM2AG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current (Ig) is within the specified limits to prevent damage.
  • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the drain and source pins as close as possible to the heat sink, and use thermal vias to dissipate heat efficiently.
  • Yes, the STW37N60DM2AG is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
  • To protect the STW37N60DM2AG from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors in the circuit.

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STW37N60DM2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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