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STW50N65DM6 - STMicroelectronics

Description: N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

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STW50N65DM6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW50N65DM6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW50N65DM6 Details

  • Manufacturer Part Number:

    STW50N65DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    560 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW50N65DM6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STW50N65DM6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure proper cooling, follow the recommended thermal design guidelines in the datasheet, including the use of a heat sink, thermal interface material, and proper PCB design. Additionally, consider the device's thermal resistance, junction temperature, and power dissipation to ensure the device operates within a safe temperature range.
  • The recommended gate drive voltage and current for the STW50N65DM6 are not explicitly stated in the datasheet. However, as a general guideline, a gate drive voltage of 10-15V and a current of 1-5A are commonly used for this type of device. The specific gate drive requirements may vary depending on the application and switching frequency.
  • To prevent shoot-through and cross-conduction in a half-bridge configuration, ensure that the gate drive signals are properly synchronized and delayed to prevent simultaneous conduction of both devices. Additionally, consider using a dead-time generator or a dedicated half-bridge driver IC to ensure proper timing and minimize the risk of shoot-through and cross-conduction.
  • The recommended layout and routing for the STW50N65DM6's pins are not explicitly stated in the datasheet. However, as a general guideline, follow good PCB design practices, such as keeping the power and ground traces separate, using a solid ground plane, and minimizing the length and inductance of the gate drive traces.

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STW50N65DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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