Part Image

STW65N65DM2AG - STMicroelectronics

Description: Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A MDmesh™ DM2 Power MOSFET in a TO-247 Package

Download STW65N65DM2AG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STW65N65DM2AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T O-247_
click to zoom
3D Models
STW65N65DM2AG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - T O-247_
click to zoom

STW65N65DM2AG Details

  • Manufacturer Part Number:

    STW65N65DM2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW65N65DM2AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STW65N65DM2AG is -40°C to 150°C.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the recommended PCB layout guidelines.
  • The maximum current rating for the STW65N65DM2AG is 65A.
  • It is recommended to use an overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit to protect the device from overvoltage and undervoltage conditions.
  • The recommended PCB layout for the STW65N65DM2AG includes using a solid ground plane, placing the input and output capacitors close to the device, and using short and wide traces for the power lines.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STW65N65DM2AG Overview

Use the download button to access the STW65N65DM2AG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STW65, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STW65N65DM2AG

Showing 0 results