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STW68N65DM6-4AG - STMicroelectronics

Description: Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package

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STW68N65DM6-4AG - STMicroelectronics PCB footprint - Other - Other - TO247-4_2022-2
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STW68N65DM6-4AG - STMicroelectronics - 3D model - Other - TO247-4_2022-2
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STW68N65DM6-4AG Details

  • Manufacturer Part Number:

    STW68N65DM6-4AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2020-10-12

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1.9 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    72 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.6 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW68N65DM6-4AG Frequently Asked Questions (FAQs)

  • The STW68N65DM6-4AG can operate from -40°C to 150°C (TJ), but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
  • To ensure proper biasing, the gate-source voltage (VGS) should be between 2V and 10V, and the drain-source voltage (VDS) should be between 0V and 650V. Additionally, the device should be operated within the recommended operating area (SOA) to prevent damage.
  • The recommended gate resistor value is typically between 1kΩ and 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity.
  • Yes, the STW68N65DM6-4AG is suitable for high-frequency switching applications up to 1MHz. However, the device's performance and reliability may degrade at higher frequencies, so careful design and testing are recommended.
  • To protect the device from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode, as well as a current sense resistor and a fuse or a current limiter. Additionally, ensure that the device is operated within its recommended operating conditions and SOA.

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STW68N65DM6-4AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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