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STW6N120K3 - STMicroelectronics

Description: STMicroelectronics STW6N120K3 N-channel MOSFET Transistor, 6 A, 1200 V, 3-Pin TO-247

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STW6N120K3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2023
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3D Models
STW6N120K3 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247_2023
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STW6N120K3 Details

  • Manufacturer Part Number:

    STW6N120K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW6N120K3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STW6N120K3 is 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate drive voltage for the STW6N120K3 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the STW6N120K3 from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure that the device is stored in a conductive bag or wrapped in anti-static material during transportation and storage.
  • The maximum allowed dv/dt for the STW6N120K3 is 10 kV/μs. Exceeding this value may cause the device to malfunction or fail.

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STW6N120K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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