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STW9N80K5 - STMicroelectronics

Description: N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

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STW9N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW9N80K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 (H=5.15mm)
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STW9N80K5 Details

  • Manufacturer Part Number:

    STW9N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    TO-247

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.65 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STW9N80K5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STW9N80K5 can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure the STW9N80K5 is properly biased, make sure to follow the recommended biasing scheme in the datasheet. This typically involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range. Additionally, ensure the device is operated within the recommended current and power limits.
  • To minimize parasitic inductance and capacitance, it's recommended to follow a compact PCB layout with short traces and minimal vias. Place the device close to the power source and use a solid ground plane to reduce inductance. Additionally, use a Kelvin connection for the source pin to reduce parasitic inductance and improve high-frequency performance.
  • To protect the STW9N80K5 from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an anti-static bag or container. Additionally, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from ESD events.
  • The recommended cooling method for the STW9N80K5 depends on the application and power dissipation requirements. For low-power applications, natural convection may be sufficient. For higher-power applications, forced air cooling or a heat sink may be required. In extreme cases, liquid cooling may be necessary. Ensure the cooling method is designed to keep the junction temperature below the recommended maximum.

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STW9N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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