Part Image

STWA48N60M2 - STMicroelectronics

Description: N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO‑247 long leads package

Download STWA48N60M2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STWA48N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads_2022
click to zoom
3D Models
STWA48N60M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads_2022
click to zoom

STWA48N60M2 Details

  • Manufacturer Part Number:

    STWA48N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    168 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA48N60M2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STWA48N60M2 is -40°C to 150°C.
  • To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a gate driver with a high current capability and a low impedance path to the MOSFET.
  • The recommended gate drive voltage for the STWA48N60M2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To minimize power losses, optimize the gate drive circuitry, use a low-inductance layout, and ensure proper thermal management. Additionally, consider using a MOSFET with a low RDS(on) and a high switching frequency.
  • The maximum allowable drain-source voltage for the STWA48N60M2 is 600V.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STWA48N60M2 Overview

Use the download button to access the STWA48N60M2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STWA4, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STWA48N60M2

Showing 0 results